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VSP-888 SW

VSP-888 SW

Application

Descumming (PR, PI, PBO, BCB)
Surface reforming
Insulation film etching (SiO2, Si3N4)

Applying during bump forming used on wafer level packaging
Descumming sensitive film after development without damage to sensitive film of other area
for ensuring normal electroplating for bump forming

Specification

Plasma source ICP & RF bias
Wafer size 200mm / 300mm
Wafer transfer Vacuum transfer using loadLock
System dimension (mm)
Process chamber
2750 x 3130 x 1775
Max 3
Application Descum (PR, PI, PBO, BCB)
Surface modification
Etch (SiO2, Si3N4)
Operating software Windows 7
FIDES - cluster control software

Features

-High etching uniformity: 〈 3%
-Brooks Platform with reliability demonstrated
-Oxidation preventing and particles reducing by conveyance in vacuum
-Applying optimized chamber for reducing dispensable costs
-Handling mold & class wafer by making use of high-capability ESC chuck