웨이퍼 레벨 패키지에서 범프 형성을 위한 개선된 시스템
선택적 Scum 제거 및 안정적인 전기 도금
PlasmaSource | ICP& RF bais |
---|---|
WaferSize | 200mm/ 300mm |
WaferTransfer | ATMTransfer |
SystemDimension | 2970(W)x 2210(D) x 1800(H)mm |
ProcessChamber | Max4 |
Application | Descum(PR, PI, PBO, BCB) |
SurfaceModification | |
Etch(SiO2,Si3N4) | |
Operating Software | Windows7 |
FIDES– cluster control software |
- High throughput : ~ < 170 WPH
- Good Etching Uniformity : < 3%
- ATM dual hands platform
- Low CoC By optimized simple chamber design